 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA 2N6517 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb= 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 350 350 6 250 500 680 E-Line TO92 Compatible VALUE UNIT V V V mA mA mW C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) MIN. 350 350 5 50 50 0.3 0.35 0.5 1.0 0.80 0.85 0.90 2.0 20 30 30 20 15 40 3-3 MAX. UNIT V V V nA nA V V V V V V V V CONDITIONS. IC=100A, IE=0 IC=1mA, IB=0* IE=10A, IC=0 VCB=250V, IE=0 VEB=5V, IC=0 IC=10mA, IB=1mA* IC=20mA, IB=2mA* IC=30mA, IB=3mA* IC=50mA, IB=5mA* IC=10mA, IB=1mA* IC=20mA, IB=2mA* IC=30mA, IB=3mA* IC=100mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=50mA, VCE=10V* IC=100mA, VCE=10V* MHz IC=10mA, VCE=20V, f=20MHz VBE(sat) VBE(on) hFE 200 200 Transition Frequency fT *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% |
Price & Availability of 2N6517
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |